型号/品牌/封装
品类/描述
库存
价格(含税)
资料
描述:
PDTC144EE - NPN resistor-equipped transistors; R1 = 47 k_, R2 = 47 k_
4235
描述:
NPN电阻配备晶体管R1 = 47 KI © ， R2 = 22 KI © NPN resistor-equipped transistors R1 = 47 kΩ, R2 = 22 kΩ
6634
描述:
PDTC143XMB - NPN resistor-equipped transistor; R1 = 4.7K, R2 = 10K
2749
描述:
PDTC124T series - NPN配电阻晶体管；R1 = 22KΩ，R2 = 开路
3714
描述:
Bipolar Pre-Biased / Digital Transistor, BRT, 50V, 100mA, 2.2KΩ, 2.2KΩ, 1, SOT-416
5070
描述:
PDTA144TMB - PNP resistor-equipped transistor; R1 = 47K, R2 = open
3639
描述:
TRANS PREBIAS PNP 150mW SC75
3009
描述:
PDTA123EMB - PNP resistor-equipped transistor; R1 = 2.2K, R2 = 2.2K
6626
描述:
PDTA143ZE - PNP resistor-equipped transistors; R1 = 4.7K, R2 = 47K
9358
描述:
PDTA123Y series - PNP resistor-equipped transistors; R1 = 2.2KΩ, R2 = 10KΩ
8173
描述:
PDTA124T series - PNP resistor-equipped transistors; R1 = 22KΩ, R2 = open
6925
描述:
PDTA113Z series - PNP resistor-equipped transistors; R1 = 1KΩ, R2 = 10KΩ
5455
描述:
PBSS4350Z - 50V 低VCEsat NPN晶体管
9537
描述:
NPN / NPN双低VCEsat晶体管突破性小信号（ BISS ）晶体管在中等功率表面贴装器件（ SMD ）塑料封装。 NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.
9375
描述:
Biss Transistor, Pnp, -15V, -500mA, 3-Sot-416
7176
描述:
Pbls2001s - 20 v Pnp Biss负载开关
8476
描述:
Pbls2003s - 20 v Pnp Biss负载开关
7871
描述:
500 V ， 250毫安PNP高电压低VCEsat晶体管（ BISS ）晶体管 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
4773
描述:
150 V ，1 A PNP高电压低VCEsat晶体管（ BISS ）晶体管 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
8784
描述:
NPN硅锗RF晶体管中等输出功率放大125毫瓦 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW
1264
Scroll
对比栏
对比栏已满，您可以删除不需要的栏内商品再继续添加
